Mono- and Bilayer WS2 Light-Emitting Transistors

We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices for both electron and hole accumulation, which enables the quantitative determination of the band gap ({\Delta}1L = 2.14 eV for monolayers and {\Delta}2L = 1.82 eV for bilayers). It also enables the operation of the transistors in the ambipolar injection regime with electrons and holes injected simultaneously at the two opposite contacts of the devices in which we observe light emission from the FET channel. A quantitative analysis of the spectral properties of the emitted light, together with a comparison with the band gap values obtained from transport, show the internal consistency of our results and allow a quantitative estimate of the excitonic binding energies to be made. Our results demonstrate the power of ionic liquid gating in combination with nanoelectronic systems, as well as the compatibility of this technique with optical measurements on semiconducting transition metal dichalcogenides. These findings further open the way to the investigation of the optical properties of these systems in a carrier density range much broader than that explored until now.Comment: 22 pages, 6 figures, Nano Letters (2014

Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode we can invert the sign of the photocurrent showing that the minority photocarriers are either electrons or holes. Both in the electron- and the hole-doping regimes the photocurrent decays exponentially as a function of the distance between the illumination spot and the nearest contact, in agreement with a two-terminal Schottky-barrier device model. This allows us to compare the value and the doping dependence of the diffusion length of the minority electrons and holes on a same sample. Interestingly, the diffusion length of the minority carriers is several times larger in the hole accumulation regime than in the electron accumulation regime, pointing out an electron-hole asymmetry in WS2

RecurSeed and EdgePredictMix: Single-stage Learning is Sufficient for Weakly-Supervised Semantic Segmentation

Although weakly-supervised semantic segmentation using only image-level labels (WSSS-IL) is potentially useful, its low performance and implementation complexity still limit its application. The main causes are (a) non-detection and (b) false-detection phenomena: (a) The class activation maps refined from existing WSSS-IL methods still only represent partial regions for large-scale objects, and (b) for small-scale objects, over-activation causes them to deviate from the object edges. We propose RecurSeed which alternately reduces non and false-detections through recursive iterations, thereby implicitly finding an optimal junction that minimizes both errors. We also propose a novel data augmentation (DA) approach called EdgePredictMix, which further expresses an object's edge by utilizing the probability difference information between adjacent pixels in combining the segmentation results, thereby compensating for the shortcomings when applying the existing DA methods to WSSS. We achieved new state-of-the-art performances on both the PASCAL VOC 2012 and MS COCO 2014 benchmarks (VOC val 74.4%, COCO val 46.4%). The code is available at https://github.com/OFRIN/RecurSeed_and_EdgePredictMix

Observation of chiral quantum-Hall edge states in graphene

In this study, we determined the chiral direction of the quantum-Hall (QH) edge states in graphene by adopting simple two-terminal conductance measurements while grounding different edge positions of the sample. The edge state with a smaller filling factor is found to more strongly interact with the electric contacts. This simple method can be conveniently used to investigate the chirality of the QH edge state with zero filling factor in graphene, which is important to understand the symmetry breaking sequence in high magnetic fields ($\gtrsim$25 T).Comment: 3 pages, 3 figures. Appeared in AP

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength Dependent Mapping

The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized light, interband transitions generate an unbalanced non-equilibrium population of electrons and holes in these valleys, resulting in a finite Hall voltage at zero magnetic field when a current flows through the system. This is the so-called valley Hall effect that has recently been observed experimentally. Here, we show that this effect is mediated by photo-generated neutral excitons and charged trions, and not by inter-band transitions generating independent electrons and holes. We further demonstrate an experimental strategy, based on wavelength dependent spatial mapping of the Hall voltage, which allows the exciton and trion contributions to the valley Hall effect to be discriminated in the measurement. These results represent a significant step forward in our understanding of the microscopic origin of photo-induced valley Hall effect in semiconducting transition metal dichalcogenides, and demonstrate experimentally that composite quasi-particles, such as trions, can also possess a finite Berry curvature.Comment: accepted for publication in Nano Letter

How Team-Level and Individual-Level Conflict Influences Team Commitment: A Multilevel Investigation

We investigate how two different types of conflict (task conflict and relationship conflict) at two different levels (individual-level and team-level) influence individual team commitment. The analysis was conducted using data we collected from 193 employees in 31 branch offices of a Korean commercial bank. The relationships at multiple levels were tested using hierarchical linear modeling (HLM). The results showed that individual-level relationship conflict was negatively related to team commitment while individual-level task conflict was not. In addition, both team-level task and relationship conflict were negatively associated with team commitment. Finally, only team-level relationship conflict significantly moderated the relationship between individual-level relationship conflict and team commitment. We further derive theoretical implications of these findings

Observation of Supercurrent in PbIn-Graphene-PbIn Josephson Junction

Superconductor-graphene-superconductor (SGS) junction provides a unique platform to study relativistic electrodynamics of Dirac fermions combined with proximity-induced superconductivity. We report observation of the Josephson effect in proximity-coupled superconducting junctions of graphene in contact with Pb1-xInx (x=0.07) electrodes for temperatures as high as T = 4.8K, with a large IcRn (~ 255 microV). This demonstrates that Pb1-xInx SGS junction would facilitate the development of the superconducting quantum information devices and superconductor-enhanced phase-coherent transport of graphene.Comment: 8 pages, 7 figures, accepted in PR

Beating of Aharonov-Bohm oscillations in a closed-loop interferometer

One of the points at issue with closed-loop-type interferometers is beating in the Aharonov-Bohm (AB) oscillations. Recent observations suggest the possibility that the beating results from the Berry-phase pickup by the conducting electrons in materials with the strong spin-orbit interaction (SOI). In this study, we also observed beats in the AB oscillations in a gate-defined closed-loop interferometer fabricated on a GaAs/AlGaAs two-dimensional electron-gas heterostructure. Since this heterostructure has very small SOI, the picture of the Berry-phase pickup is ruled out. The observation of beats in this study, with the controllability of forming a single transverse subband mode in both arms of our gate-defined interferometer, also rules out the often-claimed multiple transverse subband effect. It is observed that nodes of the beats with an h/2e period exhibit a parabolic distribution for varying the side gate. These results are shown to be well interpreted, without resorting to the SOI effect, by the existence of two-dimensional multiple longitudinal modes in a single transverse subband. The Fourier spectrum of measured conductance, despite showing multiple h/e peaks with the magnetic-field dependence that are very similar to that from strong-SOI materials, can also be interpreted as the two-dimensional multiple-longitudinal-modes effect